| PART |
Description |
Maker |
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| 64P-501 64P-502 64P-504 64P-503 64W-501 64W-502 64 |
µP Reset Circuits with Capacitor-Adjustable Reset/Watchdog Timeout Delay
TRIMMER 11MM CERMET MEHR 500R 300V 0.5W
TRIMMER 11MM CERMET MEHR 50K 300V 0.5W
TRIMMER 11MM CERMET MEHR 200K 300V 0.5W
TRIMMER 11MM CERMET MEHR 1K 300V 0.5W
TRIMMER 1K
TRIMMER 11MM CERMET MEHR 200R 300V 0.5W
TRIMMER 11MM CERMET MEHR 1M 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10000V.5W
TRIMMER 11MM CERMET MEHR 1M 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10000V0.5W
TRIMMER 11MM CERMET MEHR 100K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 100K00V.5W
TRIMMER 11MM CERMET MEHR 500K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 500K00V0.5W
TRIMMER 11MM CERMET MEHR 10K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 10,000 300V0.5W
TRIMMER 11MM CERMET MEHR 2K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 2K 300V.5W
TRIMMER 11MM CERMET MEHR 20K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 20,000 300V.5W
TRIMMER 11MM CERMET MEHR 5K 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 5K 300V.5W
TRIMMER 11MM CERMET MEHR 100R 300V 0.5W 修边1毫米金属陶瓷伊朗Mehr 100R 300V.5W
|
Vishay Intertechnology, Inc.
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Amphenol, Corp.
|
| MSB92T1G |
PNP Silicon General Purpose High Voltage Transistor
SS SC59 HV XSTR PNP 300V 150 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| MJ15023 MJ15023-D |
Power 16A 200V Discrete PNP
Silicon Power Transistors
|
ON Semiconductor
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| DSS60600MZ4 DSS60600MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
6 A, 60 V, PNP, Si, POWER TRANSISTOR GREEN, PLASTIC PACKAGE-4
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| MMBTA92-13-F MMBTA92-7-F |
300V PNP SMALL SIGNAL TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| FQB14N30 FQI14N30 FQB14N30TM |
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
300V N-Channel MOSFET 14.4 A, 300 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
300V N-Channel QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FZT705 FZT705TC FZT704TA FZT705TA FZT704 |
SOT223 PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
PNP Darlington Transistor
Discrete - Bipolar Transistors - Darlington Transistors
|
List of Unclassifed Manufac...
List of Unclassifed Manufacturers
Diodes Incorporated
http://
Diodes Inc.
Zetex Semiconductors
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp.
Microsemi Corporation
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
